Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (2024)

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Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator Fe/Bi2Se3 heterojunctions

Rui Sun, Yun-bin Sun, Na Li, Hao-Pu Xue, Yan Li, Xu Yang, Yang Li, Andrew H. Comstock, Dali Sun, Wei He, Xiang-Qun Zhang, and Zhao-Hua Cheng
Phys. Rev. B 110, 024408 – Published 8 July 2024
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Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (1)

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    Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (2)

    Abstract

    The elegant spin physics of Dirac electrons in topological insulators (TIs) have considerably endowed fertile tunability of magnetic/TI heterojunction performance with modified spin-orbit effect engineering. Signatures of proximate hybridization between magnetic states and topological surface states have been reported. However, the nature of the spin relaxation process in these systems remains elusive. Here, we unambiguously demonstrate anisotropic spin relaxation in a spin-orbit-hybridized Fe/Bi2Se3 system. We find a sixfold anisotropy of the Gilbert damping parameter with modulation of up to 33% in Fe/Bi2Se3 in the presence of a topological surface state, together with a sixfold magnetic anisotropy. We anticipate the presence of a spin interplay between the topological spin-orbit texture and magnetic orbital states would manifest an anisotropic Gilbert damping, which corroborates with the density functional theory calculations. It is further demonstrated by the spin Hanle effect indicative of anisotropic spin relaxation time τs in the adjacent topological layer, inversely scaling with the Gilbert damping factor αG. Our findings present an alternative scenario of the anisotropic spin transport process and offer insights into spin manipulation in spin-logic/memory devices utilizing proximity-hybridized Dirac electrons.

    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (3)
    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (4)
    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (5)
    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (6)
    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (7)
    • Received 10 April 2024
    • Revised 14 June 2024
    • Accepted 18 June 2024

    DOI:https://doi.org/10.1103/PhysRevB.110.024408

    ©2024 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas

    Dynamic spin injectionSpin currentSpin diffusionSpin dynamicsSpin relaxationSurface states

    1. Physical Systems

    Magnetic thin filmsSolid-solid interfacesTopological insulators

    1. Techniques

    Electronic structureFerromagnetic resonance

    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    Rui Sun1,2,3, Yun-bin Sun4, Na Li1,2, Hao-Pu Xue1,2, Yan Li1,2, Xu Yang1,5, Yang Li1,2, Andrew H. Comstock3, Dali Sun3, Wei He1, Xiang-Qun Zhang1, and Zhao-Hua Cheng1,2,5,*

    • *Contact author: zhcheng@iphy.ac.cn

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    Vol. 110, Iss. 2 — 1 July 2024

    Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (8)
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    Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (11)

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    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (12)

      Figure 1

      (a) Schematic diagram of measurement configuration and defined coordinate system. (b) X-ray diffraction and low-energy electron diffraction pattern of 9-QL Bi2Se3 on Si(111). The arrow points to the 110 direction (ΓK) of grown Bi2Se3, which is defined as the x axis. (c) and (d) Real part of S21 vs magnetic field at different frequencies for Fe(11nm)/Bi2Se3(3QL)/Si(111) (FBS-3) and Fe(11nm)/Bi2Se3(9QL)/Si(111) (FBS-9), respectively. (e) Resonance field Hres@16 GHz at different azimuthal φH for FBS-3 and FBS-9 (f), respectively. The solid lines are fitting curves.

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    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (13)

      Figure 2

      Top panel: (a)–(c) Resonance linewidth ΔH vs frequency f along the separate azimuthal direction with φH=0,30,60,90 for FBS-9, FBS-3, and FCBS-9 samples. EA and HA represent the easy and hard axes of magnetic anisotropy. The green, yellow, purple, and pink solid lines are fitting curves. Bottom panel: (d)–(f) The obtained value of Gilbert damping factor α vs azimuthal φH. The red solid lines are a guide for the eyes.

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    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (14)

      Figure 3

      (a) Typical spin-pumping voltage response Vsp as a function of the magnetic field. The colorful curves are experimental raw data at different θH from 0 to 85. The microwave is fixed at 10 GHz with a power of 50 mW. The inset shows the schematic image of the measurement configuration. (b) The experimental resonance field Hres vs θH at 10 GHz (top panel). The red solid line is the simulated curve. The calculated magnetization angle θM vs θH is shown in the bottom panel.

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    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (15)

      Figure 4

      The θH dependence of spin-to-charge conversion voltage VIEE(θH) for FBS-9, FBS-3, and FCBS-9 along the EA direction (a)–(c) and along the HA direction (d)–(f), respectively. The solid lines are best-fitted curves. The dashed lines are plotted for comparison. (g) Comparison of Gilbert damping factor and spin relaxation time for FBS-9, FBS-3, and FCBS-9 along the EA and HA directions.

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    • Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (16)

      Figure 5

      Comparison of the band structure of Fe(6ML)/Bi2Se3(9QL) and spin polarization σz component distribution along ΓK and ΓM. (a) Overall energy band of Fe-Bi2Se3 when magnetization is along ΓM (red curve, 100 direction) and ΓK (black curve, 110 direction). Spin polarization σz component distribution near Fermi level when magnetization of Fe is along 100 (b) and 110 (c), respectively. The color of the right side (ΓM) in (c) is much darker than that in (b) (ΓK) near Fermi level, indicating the modulation of the σz component when alternating the magnetization. The blue and red colors depict the relative magnitude of the σz component.

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    Anisotropic spin relaxation in exchange-coupled ferromagnet/topological-insulator $\mathrm{Fe}\text{/}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterojunctions (2024)

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